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OSA | Low-loss high-Q silicon-rich silicon nitride ...

2020-12-25 · Silicon nitride is a dielectric material widely used for applications in linear and nonlinear optics. It has an ultra-broad transparency window, low intrinsic loss, and a refractive index that allows for moderate optical field confinement in waveguides. The chemical composition of this material can be precisely set during the fabrication process, leading to an extra degree of freedom for ...

OSA | Low-loss high-Q silicon-rich silicon nitride ...

OSA | Low loss CMOS-compatible silicon nitride …

Low temperature deposition of low loss silicon nitride (SiN) thin-films is very attractive as it opens opportunities for realization of multi-layer photonic chips and hybrid integration of optical waveguides with temperature sensitive platforms such as processed CMOS silicon electronics or lithium niobate on insulator. So far, the most common low-temperature deposition technique for SiN is ...

Low‐Stress Silicon Nitride Platform for Mid‐Infrared ...

A monolithic Mid‐IR microphotonics platform is demonstrated by engineered Si‐rich and low‐stress silicon nitride (SiN x) thin films.A measured optical transmission loss of < 0.2 dB cm ‐1 is achieved over a broad mid‐IR spectrum. Using the SiN x film an efficient mid‐IR directional coupler is developed that shows a high extinction ratio of 7 dB upon wavelength scanning (λ = 2.45 ...

Low-stress silicon nitride layers for MEMS applications ...

The paper presents two deposition methods for generation of SiN _xlayers with "zero" residual stress in PECVD reactors: mixed frequency and high power in high frequency mode (13.56 MHz). Traditionally, mix frequency mode is commonly used to produce low stress SiN _x layers, which alternatively applies the HF and LF mode. However, due to the low deposition rate of LF mode ...

Low-stress silicon nitride layers for MEMS applications

SPIE Digital Library Proceedings. CONFERENCE PROCEEDINGS Papers Presentations

Low-Stress LPCVD Silicon Nitride : View

Allowed materials: silicon (category), silicon (single crystal), silicon dioxide on silicon, silicon dioxide, silicon on insulator, polysilicon on silicon dioxide, silicon nitride, silicon oxy-nitride, silicon (doped), silicon germanium, silicon nitride on silicon, silicon on sapphire, polysilicon, silicon dioxide (low temperature), silicon, silicon carbide, quartz (fused silica), silicon ...

LOW-STRESS LOW-HYDROGEN LPCVD SILICON …

A microelectronic device contains a high performance silicon nitride layer which is stoichiometric within 2 atomic percent, has a low stress of 600 MPa to 1000 MPa, and has a low hydrogen content, less than 5 atomic percent, formed by an LPCVD process.

Analysis of LPCVD process conditions for the …

2002-2-1 · A wide range of process conditions were investigated to optimize conditions for the deposition of low stress silicon nitride films by low-pressure chemical vapor deposition. Experiments carried out in a standard, multi-wafer batch system generated films with an index of refraction ranging from about 2.04 to 2.82 and residual stress ranging from ...

Silicon Nitride Films - Silicon Valley Microelectronics

Silicon Nitride Films. Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability. It is commonly used for hard masks, as a dielectric material, or as a passivation layer. Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. SVM offers two types of nitride films: LPCVD and PECVD.

"Investigation of Low-Stress Silicon Nitride as a ...

The material properties of low stress silicon nitride make it a possible replacement material for beryllium in X-ray windows. In this study, X-ray windows made of LPCVD deposited low stress silicon nitride are fabricated and characterized. The Young's modulus of the LPCVD low stress silicon nitride are characterized and found to be 226±23 GPa.

"Investigation of Low-Stress Silicon Nitride as a ...

Super Low-Stress LPCVD Silicon Nitride : View

Super Low-Stress LPCVD Silicon Nitride . ... Allowed materials: polysilicon on silicon dioxide, silicon germanium, silicon (single crystal), silicon nitride on silicon, silicon dioxide (low temperature), silicon oxy-nitride, silicon nitride, silicon on insulator, silicon dioxide, silicon, silicon dioxide on silicon, silicon on sapphire, silicon ...

PECVD Low Stress Silicon Nitride Analysis and …

A double layer of silicon nitride with a deposition rate of ~100 nm/min and low compressive residual stress is obtained, which is suitable for the fabrication of the thick nitride layer used as mechanical support. A mixed frequency nitride with compliant insulating performance is analyzed.

PECVD low stress silicon nitride analysis and …

Two technological options to achieve a high deposition rate, low stress plasma-enhanced chemical vapor deposition (PECVD) silicon nitride to be used in capacitive micromachined ultrasonic transducers (CMUT) fabrication are investigated and presented. Both options are developed and implemented on standard production line PECVD equipment in the framework of a CMUT technology transfer from R & ...

Nitride on Silicon Wafers (SiN) for research & …

Nitride on Silicon Wafers (SiN) in stock. LPCVD, stoichiometric, low stress, super low stress on all diameters from a few nanometers thick to microns.

Linear and nonlinear characterization of low-stress …

2015-10-5 · In this paper we introduce a low-stress silicon enriched nitride platform that has potential for nonlinear and highly integrated optics. The manufacturing process of this platform is CMOS compatible and the increased silicon content allows tensile stress reduction and crack free layer growth of 700 nm.

Lifetime and Stability of Silicon Nitride Nanopores and ...

2020-7-31 · We report the lifetime and durability of pores and porous arrays in 10 to 100 nm-thick, low-stress silicon nitride (SiNx) membranes. Pores are fabricated using a transmission electron microscope (TEM) and/or electron beam lithography (EBL) and reactive ion etching (RIE), with diameters from 2 …